The author compares advantages and disadvantages of measures of positive discrimination and strategies of gender mainstreaming. At the beginning she describes the history of both measures and she focuses on their use for the purposes of gender equality. Whereas the author criticizes measures of positive discrimination on the basis of its stigmatizing and categorizing potential effect, she highlights the strategies of gender mainstreaming because of their neutral definitions and preventive character. In particular, she criticizes quotas that in her opinion add members of disadvantaged groups to the system without changing its systemic oppressive nature and thus stabilize institutional oppression. Nevertheless, she draws attention to a demerit of measures of gender mainstreaming as well. Namely she mentions the risk that gender mainstreaming would become measure for its own sake and that general use of these strategies would lead to ''gender oversaturation''.
Pb(Zr,Ti)O3 (PZT) is a ferroelectric material interesting for its high dielectric constant and piezoelectric response. PZT thin films can be prepared by various methods, e.g. pulsed laser deposition, chemical vapor deposition, sol-gel and, most frequently, sputtering. Though the magnetron sputtering is used more frequently, PZT thin films can be prepared also by ion-beam sputtering (IBS). In this paper we study the deposition process of PZT thin films in our IBS system with a possibility of ion-beam assisted deposition (IBAD), which has the advantage that more energy can be added to the growing layer. We focus here mainly on the influence of the oxygen flux during the deposition on the quality of the resulting layers. We compare the samples grown on the silicon substrate with and without an intermediate Ti seeding layer. and Olovo-zirkonát-titanát Pb(Zr,Ti)O3 (PZT) je ferroelektrický materiál zajímavý pro svou vysokou dielektrickou konstantu a silnou piezoelektrickou odezvu. Tenké PZT vrstvy mohou být připraveny různými metodami, např. pulzní laserovou depozicí, chemickým nanášením par, metodou sol-gel a nejčastěji naprašováním. I když se magnetronové naprašování používá častěji, mohou být tenké PZT vrstvy připraveny i naprašováním iontovým svazkem (IBS). V tomto článku studujeme depoziční proces tenkých PZT vrstev v našem systému depozice iontovým svazkem s možností asistenčního iontového svazku (IBAD). Soustředíme se zejména na ovlivnění kvality výsledných vrstev množstvím připouštěného kyslíku během depozice. Porovnáváme vzorky pěstované na křemíkovém substrátu s Ti mezivrstvou nebo bez ní.